? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c44a i dm t c = 25 c, note 1 176 a i ar t c = 25 c44a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 550 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 800 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2 ma r ds(on) v gs = 10 v, i d = i t 0.165 ? note 1 ds99085(09/03) isoplus-264 tm hiperfet tm power mosfets isoplus264 tm (electrically isolated backside) single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density ixfl 44n80 v dss = 800 v i d25 = 44 a r ds(on) = 0.165 ? ? ? ? ? g = gate c = collector e = emitter tab = collector g c e (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = i t note 2 32 50 s c iss 10000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 330 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 48 ns t d(off) r g = 1 ? (external) 100 ns t f 24 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 70 nc q gd 170 nc r thjc 0.225 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive; 176 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.3 v t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 250 ns q rm 1.2 c i rm 8a note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % 3. test current i t = 22a ixfl 44n80 isoplus 264 outline
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